Fully Differential Receiver Chipset for 40 Gb/s Applications Using GaInAs/InP Single Heterojunction Bipolar Transistors
نویسندگان
چکیده
Advent of multimedia applications, which require data links with ever-increasing capacity, is necessitating highspeed optical communication systems and driving research and development for high-speed ICs operating at 40 Gb/s. These optical fiber communication systems require high performance and low power chipsets, which incorporate useful service functions. Figure 1 illustrates a typical receiver block diagram. The transimpedance amplifier (TIA) converts the current variations generated by the photodetector to an amplified voltage swing at its output. A limiting amplifier, by providing a large dynamic range and a constant limited output, is generally utilized to further shape the signal received from the TIA. The serial high-bit rate data are then passed through a clock and data recovery stage (CDR) for further signal shaping and demultiplexed down to multiple parallel lanes at lower bit rates for easy interfacing with the transport / service ICs, such as de-framers, and finally passed on to network processors for further manipulation.
منابع مشابه
Performance of InP/InGaAs Heterojunction Bipolar Transistors For 40Gb/s OEIC Applications
A high performance InP/InGaAs SHBT technology will be presented. InP SHBT is advantageous in terms of low-cost monolithic integration with photodiodes for high-speed optical receiver frontend applications. We will demonstrate that, through optimized CAD geometries, the fabricated HBTs showed uniform and improved device performance. Our best results show that an fT of over 160 GHz and fmax of gr...
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